(China (Mainland))
Product Summary
The 2N3632 is a silicon Epitaxial NPN Planar high frequency transistor employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance and low output capacitance. The 2N3632 is intended for class A, B, or C amplifier, oscillator or frequency multiplier circuits and are specifically designed for operation in the VHF-UHF region.
Parametrics
2N3632 absolute maximum ratings: (1)VCBO, Collector to Base Voltage: 65 V; (2)VCEO, Collector to Emitter Voltage: 40 V; (3)VEBO, Emitter to Base Voltage: 4.0 V; (4)IC(max), Continuous Collector Current: 3.0 A; (5)PD Total Dissipation at 25℃ stud: 23.0V; (6)Tj Junction Temperature: 200℃; (7)Tstg Storage Temperature: -65 to 150℃.
Features
2N3632 features: (1)Frequency 130 to 400MHz; (2)Voltage: 28V; (3)Power out: 2.5 to 13.5W; (4)High power gain; (5)High efficiency; (6)Class transistors; (7)Common emitter.
Diagrams
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 2N3634 |
Other |
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Data Sheet |
Negotiable |
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2N3634L |
Other |
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Data Sheet |
Negotiable |
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2N3635 |
Central Semiconductor |
Transistors Bipolar (BJT) PNP Ampl/Switch |
Data Sheet |
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2N3635L |
Other |
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Data Sheet |
Negotiable |
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2N3636 |
Other |
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Data Sheet |
Negotiable |
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2N3636L |
Other |
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Data Sheet |
Negotiable |
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